Imagine living without a heart. It is possible — if you have a new artificial heart pumping blood through your body. You can even go to the supermarket, watch your kid’s soccer game or go on a hike.
Posts tagged "UCLA"
-
UCLA doctors remove man's heart, replace it with total artificial heart →
-
UCLA researchers on how they created HIV-fighting stem cells
Source youtube.com -
UCLA-engineered stem cells seek out and kill HIV in living organisms →
Human stem cells genetically engineered into HIV-fighting cells can attack HIV-infected cells in a living animal model, a team of UCLA researchers has demonstrated
“We believe that this study lays the groundwork for the potential use of this type of an approach in combating HIV infection in infected individuals, in hopes of eradicating the virus from the body,” said lead investigator Scott G. Kitchen, an assistant professor of medicine in the division of hematology and oncology at the David Geffen School of Medicine at UCLA and a member of the UCLA AIDS Institute.
-
Correcting human mitochondrial mutations →
Researchers at the UCLA stem cell center and the departments of chemistry and biochemistry and pathology and laboratory medicine have identified, for the first time, a generic way to correct mutations in human mitochondrial DNA by targeting corrective RNAs, a finding with implications for treating a host of mitochondrial diseases.
-
UCLA Builds Fastest Graphene Transistor Yet →
Graphene promises to be the basis for future circuits that can operate far faster than silicon chips, but first researchers have to devise the best way to build them. The latest contender comes from the University of California, Los Angeles, where scientists and engineers have used a nanowire to build a transistor based on graphene.
The resulting field-effect transistor switches at the highest speed reported so far: 300 gigahertz in a device with a channel length (the distance between the source and the drain) of 140 nanometers. That’s roughly twice as fast as the best silicon metal-oxide-semiconductor field-effect transistor of similar proportions and comparable to transistors made of indium phosphide or gallium arsenide, which are expensive compound semiconductors.
